US Patent 7564099 Monolithic MOSFET and Schottky diode device
Patent 7564099 was granted and assigned to International Rectifier (company) on July, 2009 by the United States Patent and Trademark Office.
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Patent Inventor Names
Daniel M. Kinzer0
Donald He0
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Patent abstract
A Schottky diode is integrated into a planar or trench topology MOSFET having parallel spaced source regions diffused into spaced base stripes. The diffusions forming the source and base stripes are interrupted to permit the drift region to extend to the top of the die and receive a Schottky barrier metal and the source contact. The MOSFET and Schottky share the same drift region, and the pitch between base and source stripes is not changed to receive the Schottky structure.
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US Patent 07564099 Monolithic MOSFET and Schottky diode device US Patent 7564099 Monolithic MOSFET and Schottky diode device
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Patent Number
075640990
Patent Number
75640990
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Current Assignee
Patent Jurisdiction
Patent Number
075640990
Date of Patent
July 21, 2009
0Patent Application Number
117168390
Date Filed
March 12, 2007
0Official Website
Patent Primary Examiner
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US Patent 07564099 Monolithic MOSFET and Schottky diode device
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07564099
Date of patent
July 21, 2009
Patent application number
11716839
Date Filed
March 12, 2007
Patent primary examiner
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