US Patent 7564099 Monolithic MOSFET and Schottky diode device

Patent 7564099 was granted and assigned to International Rectifier (company) on July, 2009 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

International Rectifier (company)

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

75640990

Patent Inventor Names

Donald He0

Daniel M. Kinzer0

Date of Patent

July 21, 2009

Patent Application Number

117168390

Date Filed

March 12, 2007

Patent Primary Examiner

‌

Sue Purvis

Patent abstract

A Schottky diode is integrated into a planar or trench topology MOSFET having parallel spaced source regions diffused into spaced base stripes. The diffusions forming the source and base stripes are interrupted to permit the drift region to extend to the top of the die and receive a Schottky barrier metal and the source contact. The MOSFET and Schottky share the same drift region, and the pitch between base and source stripes is not changed to receive the Schottky structure.