Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
July 21, 2009
Patent Application Number
09295607
Date Filed
April 22, 1999
Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor device of having an insulating film comprising aluminum nitride and oxygen provided over a rear surface of a substrate. A transistor is provided over the insulating film. The transistor has at least a channel formation region comprising crystalline silicon, a gate insulating film adjacent to the channel formation region, and a gate electrode adjacent to the channel formation region with the gate insulating film interposed therebetween.
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