US Patent 7553427 Plasma etching of Cu-containing layers
Patent 7553427 was granted and assigned to Tokyo Electron on June, 2009 by the United States Patent and Trademark Office.
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Patent Inventor Names
Audunn Ludviksson0
Lee Chen0
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Patent abstract
A method and apparatus are provided for plasma etching of Cu-containing layers in semiconductor devices using an aluminum source in the presence of a halogen-containing plasma. The aluminum source reacts with halogenated Cu-containing surfaces and forms volatile etch products that allows for anisotropic etching of Cu-containing layers using conventional plasma etching tools.
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US Patent 07553427 Plasma etching of Cu-containing layers US Patent 7553427 Plasma etching of Cu-containing layers
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Patent Number
075534270
Patent Number
75534270
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
075534270
Date of Patent
June 30, 2009
0Patent Application Number
105142020
Date Filed
April 14, 2003
0Official Website
Patent Primary Examiner
Edits on 18 Jun, 2022
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US Patent 07553427 Plasma etching of Cu-containing layers
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07553427
Date of patent
June 30, 2009
Patent application number
10514202
Date Filed
April 14, 2003
Patent primary examiner
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