US Patent 7553427 Plasma etching of Cu-containing layers

Patent 7553427 was granted and assigned to Tokyo Electron on June, 2009 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Tokyo Electron

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

75534270

Patent Inventor Names

Audunn Ludviksson0

Lee Chen0

Date of Patent

June 30, 2009

Patent Application Number

105142020

Date Filed

April 14, 2003

Patent Primary Examiner

‌

Allan Olsen

Patent abstract

A method and apparatus are provided for plasma etching of Cu-containing layers in semiconductor devices using an aluminum source in the presence of a halogen-containing plasma. The aluminum source reacts with halogenated Cu-containing surfaces and forms volatile etch products that allows for anisotropic etching of Cu-containing layers using conventional plasma etching tools.