Patent 7550371 was granted and assigned to SUMCO on June, 2009 by the United States Patent and Trademark Office.
A SIMOX wafer is produced by implanting an oxygen ions into a surface of a Si substrate and then conducting a high-temperature annealing, in which an atmosphere in at least an end stage of the high-temperature annealing treatment is an Ar or N2 atmosphere containing an oxygen of more than 3 volume % but not more than 10 volume %.