US Patent 7550371 Method of producing SIMOX wafer

Patent 7550371 was granted and assigned to SUMCO on June, 2009 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Current Assignee

SUMCO

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7550371

Date of Patent

June 23, 2009

Patent Application Number

11729292

Date Filed

March 27, 2007

Patent Primary Examiner

‌

Alexander G Ghyka

Patent abstract

A SIMOX wafer is produced by implanting an oxygen ions into a surface of a Si substrate and then conducting a high-temperature annealing, in which an atmosphere in at least an end stage of the high-temperature annealing treatment is an Ar or N2 atmosphere containing an oxygen of more than 3 volume % but not more than 10 volume %.