Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
April 14, 2009
Patent Application Number
11971747
Date Filed
January 9, 2008
Patent Primary Examiner
Patent abstract
The invention includes methods of forming semiconductor constructions in which electrically conductive structures are formed between bitlines to electrically connect with storage node contacts. The bitlines can be formed within trenches having faceted top portions. The invention also includes semiconductor structures containing trenches with faceted top portions, and containing bitlines within the trenches.
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