Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Joo-Hyoung Lee0
Tae-Woong Kang0
Date of Patent
March 31, 2009
0Patent Application Number
114995680
Date Filed
August 4, 2006
0Patent Primary Examiner
Patent abstract
In a transistor and a method of manufacturing the transistor, the transistor includes a dummy structure enclosing source/drain structures and channel structures. Thus, a gate electrode of the transistor may be efficiently formed over the channel structures. In addition, the source/drain structure may not grow exceedingly in an epitaxial growth process employed for forming the source/drain structure.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
