US Patent 7491626 Layer growth using metal film and/or islands
Patent 7491626 was granted and assigned to Sensor Electronic Technology on February, 2009 by the United States Patent and Trademark Office.
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A solution for manufacturing a nitride-based heterostructure, semiconductor, device, or the like, by growing one or more layers using a metal film and/or nitride islands is provided. In an embodiment of the invention, a group-III nitride film is grown on a surface of a lower layer. The nitride film is grown by first epitaxially growing a group-III metal film on the surface in a substantially nitrogen-free atmosphere. The group-III metal film is grown such that it covers substantially an entire area of the surface. Next, the group-III metal film is nitridated to form a group-III nitride film. This process can be repeated one or more times to form the layer. In another embodiment of the invention, islands are formed on a surface of a lower layer from a group-III nitride film. The islands can be used to subsequent group-III nitride growth to form the group-III nitride layer. The invention provides an improved solution for growing a layer that can be used to generate heterostructures/semiconductors/devices having improved characteristics.
US Patent 07491626 Layer growth using metal film and/or islands US Patent 7491626 Layer growth using metal film and/or islands
US Patent 07491626 Layer growth using metal film and/or islands
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