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US Patent 7480173 Spin transfer MRAM device with novel magnetic free layer

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Patent Citations Received
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US Patent 12082509 Dual magnetic tunnel junction (DMTJ) stack design
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Patent Inventor Names
Cheng T. Horng0
Ru-Ying Tong0
Yimin Guo0
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Patent abstract

A CPP MTJ MRAM element utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel free layer comprising a thin layer of Ta or Hf sandwiched by layers of CoFeB. The device is characterized by values of DR/R between approximately 95% and 105%.

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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=074801730
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US Patent 07480173 Spin transfer MRAM device with novel magnetic free layer US Patent 7480173 Spin transfer MRAM device with novel magnetic free layer

Infobox
Patent Number
074801730
Patent Number
74801730
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Infobox
Is a
Patent
Patent
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
074801730
Date of Patent
January 20, 2009
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Patent Application Number
117173470
Date Filed
March 13, 2007
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=074801730
Patent Primary Examiner
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J. H. Hur
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https://pdfpiw.uspto.gov/.piw?Docid=07480173
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 US Patent 07480173 Spin transfer MRAM device with novel magnetic free layer

Infobox
Is a
Patent
Patent
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
07480173
Date of patent
January 20, 2009
Patent application number
11717347
Date Filed
March 13, 2007
Patent primary examiner
‌
J. H. Hur

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