Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Cheng T. Horng0
Ru-Ying Tong0
Yimin Guo0
Date of Patent
January 20, 2009
0Patent Application Number
117173470
Date Filed
March 13, 2007
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A CPP MTJ MRAM element utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel free layer comprising a thin layer of Ta or Hf sandwiched by layers of CoFeB. The device is characterized by values of DR/R between approximately 95% and 105%.
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