Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jeffrey B. Johnson0
Chung H. Lam0
Date of Patent
January 13, 2009
0Patent Application Number
109054750
Date Filed
January 6, 2005
0Patent Primary Examiner
Patent abstract
A nonvolatile storage cell and an integrated circuit (IC) including the cells. A layered spacer (ONO) is formed at least at one sidewall of cell gates. Source/drain diffusions at each layered spacer underlap the adjacent gate. Charge may be stored at a layer (an imbedded nitride layer) in the layered spacer.
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