US Patent 7462910 P-channel trench MOSFET structure
Patent 7462910 was granted and assigned to International Rectifier (company) on December, 2008 by the United States Patent and Trademark Office.
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Patent abstract
A low voltage P-channel power MOSFET using trench technology has an epitaxially deposited constant concentration N channel region adjacent the side walls of a plurality of trenches. The constant concentration channel region is deposited atop a P+ substrate and receives P+ source regions at the tops of each trench. The source contact is connected to both source and channel regions for a unidirectional conduction device, or only to the source regions for a bidirectional device.
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US Patent 07462910 P-channel trench MOSFET structure US Patent 7462910 P-channel trench MOSFET structure
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Patent Number
0746291000
Patent Number
746291000
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Official Website
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
074629100
Date of Patent
December 9, 2008
0Patent Application Number
092921860
Date Filed
April 15, 1999
0Official Website
Patent Primary Examiner
Edits on 25 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
074629100
Date of Patent
December 9, 2008
0Patent Application Number
092921860
Date Filed
April 15, 1999
0Official Website
Patent Primary Examiner
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US Patent 07462910 P-channel trench MOSFET structure
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07462910
Date of patent
December 9, 2008
Patent application number
09292186
Date Filed
April 15, 1999
Patent primary examiner
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