US Patent 7462910 P-channel trench MOSFET structure

Patent 7462910 was granted and assigned to International Rectifier (company) on December, 2008 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

International Rectifier (company)

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7462910

Date of Patent

December 9, 2008

Patent Application Number

09292186

Date Filed

April 15, 1999

Patent Primary Examiner

‌

Shouxiang Hu

Patent abstract

A low voltage P-channel power MOSFET using trench technology has an epitaxially deposited constant concentration N channel region adjacent the side walls of a plurality of trenches. The constant concentration channel region is deposited atop a P+ substrate and receives P+ source regions at the tops of each trench. The source contact is connected to both source and channel regions for a unidirectional conduction device, or only to the source regions for a bidirectional device.