Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
December 9, 2008
Patent Application Number
11508230
Date Filed
August 23, 2006
Patent Primary Examiner
Patent abstract
A method of manufacturing a semiconductor device bakes a first semiconductor substrate on which a sacrifice film is formed in a reaction chamber to preliminarily coat an inner wall of the reaction chamber with a component of a gas generated by the sacrifice film, and bakes a second semiconductor substrate on which a predetermined film including the same component as that of the sacrifice film is formed in the preliminarily coated reaction chamber, while irradiating electron beams on the predetermined film to change quality of the predetermined film.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
