US Patent 7453091 Gallium nitride-based semiconductor device
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Patent Inventor Names
Hideki Tomozawa0
Hisayuki Miki0
Masato Kobayakawa0
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Patent abstract
A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity element and, in combination therewith, hydrogen.
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US Patent 07453091 Gallium nitride-based semiconductor device US Patent 7453091 Gallium nitride-based semiconductor device
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Patent Number
074530910
Patent Number
74530910
Edits on 22 Apr, 2023
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Patent Jurisdiction
Patent Number
074530910
Date of Patent
November 18, 2008
0Patent Application Number
105915850
Date Filed
March 3, 2005
0Official Website
Patent Primary Examiner
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US Patent 07453091 Gallium nitride-based semiconductor device
Infobox
Is a
Patent jurisdiction
Patent number
07453091
Date of patent
November 18, 2008
Patent application number
10591585
Date Filed
March 3, 2005
Patent primary examiner
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