Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hideki Tomozawa0
Hisayuki Miki0
Masato Kobayakawa0
Date of Patent
November 18, 2008
0Patent Application Number
105915850
Date Filed
March 3, 2005
0Patent Primary Examiner
Patent abstract
A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity element and, in combination therewith, hydrogen.
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