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US Patent 7439208 Growth of in-situ thin films by reactive evaporation

Patent 7439208 was granted and assigned to Superconductor Technologies on October, 2008 by the United States Patent and Trademark Office.

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Patent
Patent
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Patent attributes

Current Assignee
Superconductor Technologies
Superconductor Technologies
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
74392080
Patent Inventor Names
Ward S. Ruby0
Brian H. Moeckly0
Date of Patent
October 21, 2008
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Patent Application Number
107262320
Date Filed
December 1, 2003
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Patent Primary Examiner
‌
Stanley Silverman
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Patent abstract

A method of forming MgB2 films in-situ on a substrate includes the steps of (a) depositing boron onto a surface of the substrate in a deposition zone; (b) moving the substrate into a reaction zone containing pressurized, gaseous magnesium; (c) moving the substrate back into the deposition zone; and (d) repeating steps (a)-(c). In a preferred embodiment of the invention, the substrate is moved into and out of the deposition zone and the reaction zone using a rotatable platen.

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