US Patent 7402512 High aspect ratio contact structure with reduced silicon consumption
Patent 7402512 was granted and assigned to Micron Technology on July, 2008 by the United States Patent and Trademark Office.
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A high aspect ratio contact structure formed over a junction region in a silicon substrate comprises a titanium interspersed with titanium silicide layer that is deposited in the contact opening and directly contacts an upper surface of the substrate. Silicon-doping of CVD titanium, from the addition of SiH4 during deposition, reduces consumption of substrate silicon during the subsequent silicidation reaction in which the titanium reacts with silicon to form a titanium silicide layer that provides low resistance electrical contacts between the junction region and the silicon substrate. The contact structure further comprises a titanium nitride contact fill that is deposited in the contact opening and fills substantially the entire contact opening.
US Patent 07402512 High aspect ratio contact structure with reduced silicon consumption US Patent 7402512 High aspect ratio contact structure with reduced silicon consumption
US Patent 07402512 High aspect ratio contact structure with reduced silicon consumption
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