US Patent 7371332 Uniform etch system

Patent 7371332 was granted and assigned to Lam Research on May, 2008 by the United States Patent and Trademark Office.

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Is a

Patent

Patent attributes

Current Assignee

Lam Research

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7371332

Date of Patent

May 13, 2008

Patent Application Number

10642083

Date Filed

August 14, 2003

Patent Primary Examiner

‌

Allan Olsen

Patent abstract

Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, where the outer zone surrounds the inner zone and the first gas is different than the second gas. Plasmas are simultaneously generated from the first gas and second gas. The layer is etched, where the layer is etched by the plasmas from the first gas and second gas.