US Patent 7315063 CMOS transistor and method of manufacturing the same

A CMOS transistor structure and related method of manufacture are disclosed in which a first conductivity type MOS transistor comprises an enhancer and a second conductivity type MOS transistor comprises a second spacer formed of the same material as the enhancer. The second conductivity type MOS transistor also comprises a source/drain region formed in relation to an epitaxial layer formed in a recess region.