Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
January 1, 2008
Patent Application Number
11363176
Date Filed
February 28, 2006
Patent Primary Examiner
Patent abstract
A CMOS transistor structure and related method of manufacture are disclosed in which a first conductivity type MOS transistor comprises an enhancer and a second conductivity type MOS transistor comprises a second spacer formed of the same material as the enhancer. The second conductivity type MOS transistor also comprises a source/drain region formed in relation to an epitaxial layer formed in a recess region.
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