US Patent 7276175 Semiconductor device fabrication method
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Patent Inventor Names
Takuya Otabe0
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Patent abstract
A semiconductor device fabrication method comprises (1) forming a patterned mask layer on an oxide layer of a Mn-containing perovskite type oxide; (2) heat-treating the oxide layer; and (3) patterning the oxide layer with an etching solution containing at least one of hydrochloric acid, sulfuric acid, and nitric acid after the heat treatment of the oxide layer.
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US Patent 07276175 Semiconductor device fabrication method US Patent 7276175 Semiconductor device fabrication method
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Patent Number
072761750
Patent Number
72761750
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Patent Number
072761750
Date of Patent
October 2, 2007
0Patent Application Number
110626320
Date Filed
February 23, 2005
0Official Website
Patent Primary Examiner
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US Patent 07276175 Semiconductor device fabrication method
Infobox
Is a
Patent jurisdiction
Patent number
07276175
Date of patent
October 2, 2007
Patent application number
11062632
Date Filed
February 23, 2005
Patent primary examiner
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