Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takuya Otabe0
Date of Patent
October 2, 2007
0Patent Application Number
110626320
Date Filed
February 23, 2005
0Patent Primary Examiner
Patent abstract
A semiconductor device fabrication method comprises (1) forming a patterned mask layer on an oxide layer of a Mn-containing perovskite type oxide; (2) heat-treating the oxide layer; and (3) patterning the oxide layer with an etching solution containing at least one of hydrochloric acid, sulfuric acid, and nitric acid after the heat treatment of the oxide layer.
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