US Patent 7218547 ROM embedded DRAM with anti-fuse programming

A ROM embedded DRAM provides ROM cells that can be electrically programmed to a data state using DRAM capacitor memory cells. Numerous techniques for reading the memory cells are provided if a single state memory is desired. For example, bias techniques allow un-programmed ROM cells to be read accurately. In one embodiment, the memory includes program circuitry to short capacitor plates together by breaking down an intermediate dielectric layer using anti-fuse programming techniques.