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US Patent 11875866 Memory programming methods and memory systems

Patent 11875866 was granted and assigned to Micron Technology on January, 2024 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors

Is a

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Patent attributes

Patent Applicant

Micron Technology

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Current Assignee

Micron Technology

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Patent Jurisdiction

United States Patent and Trademark Office

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Patent Number

Patent Inventor Names

Takafumi Kunihiro1

Date of Patent

January 16, 2024

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Patent Application Number

165810671

Date Filed

September 24, 2019

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Patent Citations

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1

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US Patent 7337282 Memory system and process for controlling a memory component to achieve different kinds of memory characteristics on one and the same memory component

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US Patent 9117522 Nonvolatile semiconductor memory device with a write sequence including a setting and removing operation

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US Patent 9135978 Memory programming methods and memory systems

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US Patent 9165648 Resistive memory devices, circuits and methods having read current limiting

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US Patent 9293196 Memory cells, memory systems, and memory programming methods

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...

Patent Primary Examiner

Mohammed A Bashar

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CPC Code

1

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Patent abstract

Memory programming methods and memory systems are described. One example memory programming method includes programming a plurality of main cells of a main memory and erasing a plurality of second main cells of the main memory. The memory programming method further includes first re-writing one-time programmed data within a plurality of first one-time programmed cells of a one-time programmed memory during the programming and second re-writing one-time programmed data within a plurality of second one-time programmed cells of a one-time programmed memory during the erasing. Additional method and apparatus are described.

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