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US Patent 7186624 Bipolar transistor with lattice matched base layer

Patent 7186624 was granted and assigned to Kopin on March, 2007 by the United States Patent and Trademark Office.

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Patent Citations Received
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US Patent 12136620 Optical systems fabricated by printing-based assembly
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US Patent 12074213 Methods and devices for fabricating and assembling printable semiconductor elements
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Patent Inventor Names
Noren Pan0
Paul M. Deluca0
Roger E. Welser0
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Patent abstract

A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of gallium arsenide based heterojunction bipolar transistors because it can be lattice matched to gallium arsenide by controlling the concentration of indium and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentration obtained.

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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=071866240
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US Patent 07186624 Bipolar transistor with lattice matched base layer US Patent 7186624 Bipolar transistor with lattice matched base layer

Infobox
Patent Number
071866240
Patent Number
71866240
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Infobox
Is a
Patent
Patent
0
Current Assignee
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Kopin
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
071866240
Date of Patent
March 6, 2007
0
Patent Application Number
108246970
Date Filed
April 14, 2004
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Official Website
https://pdfpiw.uspto.gov/.piw?Docid=071866240
Patent Primary Examiner
‌
Carl Whitehead, Jr.
0
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Website URL
https://pdfpiw.uspto.gov/.piw?Docid=07186624
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 US Patent 07186624 Bipolar transistor with lattice matched base layer

Infobox
Is a
Patent
Patent
Current assignee
‌
Kopin
Patent jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent number
07186624
Date of patent
March 6, 2007
Patent application number
10824697
Date Filed
April 14, 2004
Patent primary examiner
‌
Carl Whitehead, Jr.

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