Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Noren Pan0
Paul M. Deluca0
Roger E. Welser0
Date of Patent
March 6, 2007
0Patent Application Number
108246970
Date Filed
April 14, 2004
0Patent Citations Received
Patent Primary Examiner
Patent abstract
A semiconductor material which has a high carbon dopant concentration and is composed of gallium, indium, arsenic and nitrogen is disclosed. The material is useful in forming the base layer of gallium arsenide based heterojunction bipolar transistors because it can be lattice matched to gallium arsenide by controlling the concentration of indium and nitrogen. The disclosed semiconductor materials have a low sheet resistivity because of the high carbon dopant concentration obtained.
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