US Patent 7172937 Method of manufacturing a non-volatile memory cell

The present invention relates to a method of manufacturing a non-volatile memory cell. The method comprises forming an ONO stack and a mask formed on the ONO stack, providing a first etching process to form a first spacer surrounding the mask, removing portions of the first spacer and the ONO stack that are not covered by the first spacer and the ONO stack, forming an electrical connection layer between the masks, forming a second spacer surrounding the mask, removing the second spacer to form a gate and removing the mask and the ONO stack which is under the mask.