Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
February 6, 2007
Patent Application Number
10907920
Date Filed
April 21, 2005
Patent Primary Examiner
Patent abstract
The present invention relates to a method of manufacturing a non-volatile memory cell. The method comprises forming an ONO stack and a mask formed on the ONO stack, providing a first etching process to form a first spacer surrounding the mask, removing portions of the first spacer and the ONO stack that are not covered by the first spacer and the ONO stack, forming an electrical connection layer between the masks, forming a second spacer surrounding the mask, removing the second spacer to form a gate and removing the mask and the ONO stack which is under the mask.
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