US Patent 7169700 Metal interconnect features with a doping gradient
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Patent abstract
A metal filled damascene structure with improved electromigration resistance and method for forming the same, the method including providing a semiconductor process wafer comprising damascene openings; and, depositing metal and at least one metal dopant according to an ECD process to from a metal filled damascene comprising a doped metal alloy portion.
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US Patent 07169700 Metal interconnect features with a doping gradient US Patent 7169700 Metal interconnect features with a doping gradient
Infobox
Patent Number
0716970000
Patent Number
716970000
Edits on 28 Mar, 2023
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Infobox
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Patent Jurisdiction
Patent Number
071697000
Date of Patent
January 30, 2007
0Patent Application Number
109137590
Date Filed
August 6, 2004
0Official Website
Patent Primary Examiner
Edits on 24 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
071697000
Date of Patent
January 30, 2007
0Patent Application Number
109137590
Date Filed
August 6, 2004
0Official Website
Patent Primary Examiner
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US Patent 07169700 Metal interconnect features with a doping gradient
Infobox
Is a
Patent jurisdiction
Patent number
07169700
Date of patent
January 30, 2007
Patent application number
10913759
Date Filed
August 6, 2004
Patent primary examiner
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