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US Patent 7139632 Enhanced process and profile simulator algorithms

Patent 7139632 was granted and assigned to Lam Research on November, 2006 by the United States Patent and Trademark Office.

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Current Assignee
Lam Research
Lam Research
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
71396320
Patent Inventor Names
David Cooperberg0
Vahid Vahedi0
Date of Patent
November 21, 2006
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Patent Application Number
109329260
Date Filed
September 1, 2004
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Patent Citations Received
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US Patent 11921433 Optical metrology in machine learning to characterize features
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US Patent 11704463 Method of etch model calibration using optical scatterometry
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Patent Primary Examiner
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Leo Picard
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Patent abstract

A method for enhancing a process and profile simulator algorithm predicts the surface profile that a given plasma process will create. An energetic particle is first tracked. The ion fluxes produced by the energetic particle are then recorded. A local etch rate and a local deposition rate are computed from neutral fluxes, surface chemical coverage, and surface material type that are solved simultaneously.

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