Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Akio Iwabuchi0
Date of Patent
November 7, 2006
0Patent Application Number
105048910
Date Filed
February 24, 2003
0Patent Primary Examiner
Patent abstract
A p-channel MOSFET 1 has a buried layer 9 between a substrate 2 and an epitaxial layer 3. The impurity concentration of the buried layer 9 is higher than that of the epitaxial layer 3. As a result, if the p-channel MOSFET 3 and an n-channel MOSFET are fabricated in a single semiconductor substrate and when a voltage is applied between the source electrode 13 and the drain electrode 12, the impurity concentration of the epitaxial layer 3 apparently increases. Thus, the charge balance of the p-channel MOSFET 1 is not lost.
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