Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Takeshi Iwamoto0
Yasuhiro Ido0
Kazushi Kono0
Date of Patent
October 3, 2006
Patent Application Number
10375125
Date Filed
February 28, 2003
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
On a semiconductor substrate a silicon oxide film is formed and provided with a recess. In the recess a reflector layer of copper is disposed as a blocking layer with a barrier metal posed therebetween. The reflector layer of copper is covered with a silicon oxide film and thereon a fuse region provided with a plurality of fuses is provided. The reflector layer of copper has a plane of reflection recessed downward to reflect a laser beam. The reflector layer of copper is arranged to overlap substantially the entirety of the fuse region, as seen in a plane. A laser beam radiated to blow the fuse can have a reduced effect on a vicinity of the fuse region. A semiconductor device reduced in size can be obtained.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
