US Patent 7078777 Semiconductor device having a low-resistance gate electrode
Patent 7078777 was granted and assigned to Elpida Memory on July, 2006 by the United States Patent and Trademark Office.
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Patent abstract
A gate electrode structure in a semiconductor device has a doped polysilicon (DOPOS) film, a tungsten silicide film, a tungsten silicide nitride film, a tungsten nitride film and a tungsten film consecutively as viewed from the substrate. The tungsten silicide nitride film is formed between the tungsten silicide film and the tungsten nitride film by a plurality of heat treatments. The tungsten silicide nitride film has a small thickness of 2 to 5 nm and has a lower interface resistance for achieving a low-resistance gate electrode, suited for a higher-speed operation of the semiconductor device.
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Patent Inventor Names
Tetsuya Taguwa0
Date of Patent
July 18, 2006
0Patent Application Number
109261330
Date Filed
August 25, 2004
0Patent Primary Examiner
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US Patent 7078777 Semiconductor device having a low-resistance gate electrode
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