US Patent 7078777 Semiconductor device having a low-resistance gate electrode

Patent 7078777 was granted and assigned to Elpida Memory on July, 2006 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Patent attributes

Current Assignee

Elpida Memory

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

70787770

Patent Inventor Names

Tetsuya Taguwa0

Date of Patent

July 18, 2006

Patent Application Number

109261330

Date Filed

August 25, 2004

Patent Primary Examiner

‌

Mary Wilczewski

Patent abstract

A gate electrode structure in a semiconductor device has a doped polysilicon (DOPOS) film, a tungsten silicide film, a tungsten silicide nitride film, a tungsten nitride film and a tungsten film consecutively as viewed from the substrate. The tungsten silicide nitride film is formed between the tungsten silicide film and the tungsten nitride film by a plurality of heat treatments. The tungsten silicide nitride film has a small thickness of 2 to 5 nm and has a lower interface resistance for achieving a low-resistance gate electrode, suited for a higher-speed operation of the semiconductor device.