US Patent 6995430 Strained-semiconductor-on-insulator device structures

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Patent

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Current Assignee

AmberWave

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

69954300

Patent Inventor Names

Anthony J. Lochtefeld0

Eugene A. Fitzgerald0

Matthew T. Currie0

Richard Hammond0

Thomas A. Langdo0

Date of Patent

February 7, 2006

Patent Application Number

104561030

Date Filed

June 6, 2003

Patent Citations Received

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US Patent 12136562 3D semiconductor device and structure with single-crystal layers

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US Patent 12068187 3D semiconductor device and structure with bonding and DRAM memory cells

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US Patent 12080743 Multilevel semiconductor device and structure with image sensors and wafer bonding

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US Patent 12094829 3D semiconductor device and structure

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US Patent 12094965 3D semiconductor device and structure with metal layers and memory cells

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US Patent 12094892 3D micro display device and structure

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US Patent 12120880 3D semiconductor device and structure with logic and memory

...

Patent Primary Examiner

‌

Minhloan Tran

Patent abstract

The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.

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US Patent 6995430 Strained-semiconductor-on-insulator device structures

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