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US Patent 12132112 Work function control in gate structures

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
July 28, 2022
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Date of Patent
October 29, 2024
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Patent Application Number
17875561
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Patent Citations
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US Patent 9171929 Strained structure of semiconductor device and method of making the strained structure
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US Patent 9214555 Barrier layer for FinFET channels
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9520482 Method of cutting metal gate
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US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof
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US Patent 9564489 Multiple gate field-effect transistors having oxygen-scavenged gate stack
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9601342 FinFETs with strained well regions
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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US Patent 10461167 Semiconductor device and method of manufacturing the same
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•••
Patent Inventor Names
Cheng-Lung Hung
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Chi On Chui
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Ji-Cheng Chen
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Hsin-Yi Lee
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Weng Chang
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12132112
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Patent Primary Examiner
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Michelle Mandala
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