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US Patent 12114581 Magnesium ion based synaptic device

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Is a
Patent
Patent
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Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
121145810
Patent Inventor Names
Martin Michael Frank0
Douglas M. Bishop0
Teodor Krassimirov Todorov0
Date of Patent
October 8, 2024
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Patent Application Number
181177550
Date Filed
March 6, 2023
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Patent Citations
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US Patent 8614432 Crystalline silicon-based memristive device with multiple mobile dopant species
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US Patent 10083974 Floating memristor
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US Patent 8759809 Integrated circuitry comprising nonvolatile memory cells having platelike electrode and ion conductive material layer
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US Patent 10256405 Methods for fabricating artificial neural networks (ANN) based on doped semiconductor elements
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US Patent 7652907 Electrochemical memory device
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US Patent 8218351 Non-volatile electrochemical memory device
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Patent Primary Examiner
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Shih Tsun A Chou
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Patent abstract

A method of fabricating a synaptic device is provided. The method includes forming a channel layer between a first terminal and a second terminal. The channel layer varies in resistance based on a magnesium concentration in the channel layer. The method further includes forming an electrolyte layer. The electrolyte layer includes a magnesium ion conductive material. A third terminal is formed over the electrolyte layer and applies a signal to the electrolyte layer and the channel layer.

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