US Patent 10083974 Floating memristor

A floating memristor with a nano-battery between a top and bottom floating gates is disclosed. The floating memristor includes a nano-battery, a top floating gate assembly disposed on an anode of the nano-battery, and a bottom floating gate assembly disposed on a cathode of the nano-battery. The floating memristor is an artificial synapse. The top floating gate assembly and the anode of the nano-battery convert electric signal to ionic signal by tunneling effect and field effect to simulate a presynaptic membrane. The electrolyte of the nano-battery is an ionic channel as a synaptic gap. The anode and the bottom floating gate transfer the ionic signal to electric signal by field effect and tunneling effect to simulate a postsynaptic membrane.