Golden has been acquired by ComplyAdvantage.Read about it here ⟶

‌

US Patent 12080761 Fully strained channel

Patent 12080761 was granted and assigned to Taiwan Semiconductor Manufacturing Company on September, 2024 by the United States Patent and Trademark Office.

Overview Structured Data Issues Contributors Activity

Is a

Patent

Current Assignee

Taiwan Semiconductor Manufacturing Company

Date Filed

January 24, 2022

Date of Patent

September 3, 2024

Patent Application Number

17582727

Patent Citations

‌

US Patent 9093530 Fin structure of FinFET

‌

US Patent 7015116 Stress-relieved shallow trench isolation (STI) structure and method for forming the same

‌

US Patent 8962400 In-situ doping of arsenic for source and drain epitaxy

‌

US Patent 9093514 Strained and uniform doping technique for FINFETs

‌

US Patent 9171929 Strained structure of semiconductor device and method of making the strained structure

‌

US Patent 9214555 Barrier layer for FinFET channels

‌

US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device

‌

US Patent 9245805 Germanium FinFETs with metal gates and stressors

‌

US Patent 9418897 Wrap around silicide for FinFETs

‌

US Patent 9520482 Method of cutting metal gate

•••

Patent Inventor Names

Chun-Chieh Wang

Shih-Chieh Chang

Huai-Tei Yang

Cheng-Han Lee

Zheng-Yang Pan

Shahaji B. More

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

12080761

Patent Primary Examiner

CPC Code

•••

Find more entities like US Patent 12080761 Fully strained channel

Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.

Open Query Tool

Access by API

By using this site, you agree to our Terms of Service.