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US Patent 12074071 Source/drain structures and method of forming

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
0
Date Filed
March 6, 2023
0
Date of Patent
August 27, 2024
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Patent Application Number
18178640
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Patent Citations
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US Patent 9520482 Method of cutting metal gate
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
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US Patent 8962400 In-situ doping of arsenic for source and drain epitaxy
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US Patent 9859380 FinFETs with strained well regions
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US Patent 9093514 Strained and uniform doping technique for FINFETs
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US Patent 9812363 FinFET device and method of forming same
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9245805 Germanium FinFETs with metal gates and stressors
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US Patent 9418897 Wrap around silicide for FinFETs
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Patent Inventor Names
Li-Li Su
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Hsueh-Chang Sung
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Yee-Chia Yeo
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Wei-Min Liu
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12074071
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Patent Primary Examiner
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Karen Kusumakar
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CPC Code
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H01L 21/823468
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B82Y 10/00
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H01L 21/823864
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H01L 21/823814
0
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H01L 21/823821
0
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H01L 21/823871
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H01L 27/0924
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H01L 29/0847
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H01L 29/4983
0
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H01L 29/66545
0
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