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US Patent 12074071 Source/drain structures and method of forming

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Patent abstractTimelineTable: Further ResourcesReferences
Is a
Patent
Patent
1

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
1
Patent Number
120740711
Patent Inventor Names
Li-Li Su1
Hsueh-Chang Sung1
Yee-Chia Yeo1
Wei-Min Liu1
Date of Patent
August 27, 2024
1
Patent Application Number
181786401
Date Filed
March 6, 2023
1
Patent Citations
‌
US Patent 9520482 Method of cutting metal gate
1
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US Patent 9576814 Method of spacer patterning to form a target integrated circuit pattern
1
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US Patent 9608116 FINFETs with wrap-around silicide and method forming the same
1
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US Patent 8962400 In-situ doping of arsenic for source and drain epitaxy
1
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US Patent 9859380 FinFETs with strained well regions
1
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US Patent 9093514 Strained and uniform doping technique for FINFETs
1
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US Patent 9812363 FinFET device and method of forming same
1
‌
US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
1
...
Patent Primary Examiner
‌
Karen Kusumakar
1
CPC Code
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H01L 21/823468
1
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B82Y 10/00
1
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H01L 21/823864
1
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H01L 21/823814
1
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H01L 21/823821
1
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H01L 21/823871
1
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H01L 27/0924
1
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H01L 29/0847
1
...
Patent abstract

A semiconductor device includes a first device region and a second device region. The first device region includes a first source/drain region extending from a substrate and a first and a second pair of spacers. The first source/drain region extends between the first pair of spacers and the second pair of spacers. The first pair of spacers and the second pair of spacers have a first height. The second device region includes a second and a third source/drain region extending from the substrate and a third and a fourth pair of spacers. The third source/drain region is separate from the second source/drain region. The second source/drain region extends between the third pair of spacers. The third source/drain region extends between the fourth pair of spacers. The third pair of spacers and the fourth pair of spacers have a second height greater than the first height.

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