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US Patent 12074028 Semiconductor device and manufacturing method thereof

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
November 7, 2022
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Date of Patent
August 27, 2024
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Patent Application Number
18053234
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Patent Citations
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US Patent 9093514 Strained and uniform doping technique for FINFETs
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US Patent 9093530 Fin structure of FinFET
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US Patent 9171929 Strained structure of semiconductor device and method of making the strained structure
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US Patent 9214555 Barrier layer for FinFET channels
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US Patent 9236267 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
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US Patent 9245805 Germanium FinFETs with metal gates and stressors
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US Patent 9418897 Wrap around silicide for FinFETs
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US Patent 9520482 Method of cutting metal gate
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US Patent 9548303 FinFET devices with unique fin shape and the fabrication thereof
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US Patent 9564489 Multiple gate field-effect transistors having oxygen-scavenged gate stack
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•••
Patent Inventor Names
Tien-Wei Yu
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Chia-Ming Tsai
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Chandrashekhar Prakash Savant
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12074028
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Patent Primary Examiner
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Christine A Enad
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CPC Code
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H01L 29/4966
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H01L 29/66795
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H01L 21/823842
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H01L 21/823821
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H01L 21/28088
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H01L 29/7851
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H01L 27/0924
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