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US Patent 12010929 Memory device and manufacturing method therefor

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
May 11, 2021
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Date of Patent
June 11, 2024
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Patent Application Number
17316794
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Patent Citations
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US Patent 9331274 Memristive element and electronic memory based on such elements
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US Patent 9121098 NanoLayer Deposition process for composite films
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US Patent 10090461 Oxide-based three-terminal resistive switching logic devices
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US Patent 7713592 Nanolayer deposition process
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US Patent 8921821 Memory cells
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Patent Inventor Names
Tae Jun Seok
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Tae Joo Park
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Dae Woong Kim
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Hye Rim Kim
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
12010929
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Patent Primary Examiner
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Victoria K. Hall
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CPC Code
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C23C 16/52
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C23C 16/45529
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C23C 16/45553
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C23C 16/403
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C23C 16/40
0
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G11C 13/0069
0
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G11C 13/0011
0

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