US Patent 12010929 Memory device and manufacturing method therefor
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US Patent 12010929 Memory device and manufacturing method therefor
Article
Patent abstract
A memory device is provided. The memory device may comprise: a first electrode; a resistance change layer placed on the first electrode and containing an alkali metal and a transition metal; and a second electrode placed on the resistance change layer, wherein the content of the alkali metal in the resistance change layer ranges from 40 at % (exclusive) to 88 at % (exclusive).
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Patent Jurisdiction
Patent Number
Patent Inventor Names
Dae Woong Kim0
Hye Rim Kim0
Tae Joo Park0
Tae Jun Seok0
Date of Patent
June 11, 2024
0Patent Application Number
173167940
Date Filed
May 11, 2021
0Patent Citations
Patent Primary Examiner
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