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US Patent 11963465 Non-volatile memory structure with positioned doping

Patent 11963465 was granted and assigned to Hefei Reliance Memory Ltd. on April, 2024 by the United States Patent and Trademark Office.

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 US Patent 11963465 Non-volatile memory structure with positioned doping

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Patent abstract

Disclosed is a resistive random access memory (RRAM). The RRAM includes a bottom electrode made of tungsten and a switching layer made of hafnium oxide disposed above the bottom electrode, wherein the switching layer includes a filament and one or more lateral regions including a doping material that are between a top region and a bottom region of the switching layer. The RRAM further includes a top electrode disposed above the switching layer.

Infobox
Is a
Patent
Patent
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Patent Applicant
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Hefei Reliance Memory Ltd.
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Current Assignee
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Hefei Reliance Memory Ltd.
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
119634650
Patent Inventor Names
Gary Bela Bronner0
Zhichao Lu0
Date of Patent
April 16, 2024
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Patent Application Number
181144190
Date Filed
February 27, 2023
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Patent Citations
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US Patent 8866122 Resistive switching devices having a buffer layer and methods of formation thereof
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US Patent 9281475 Resistive random-access memory (RRAM) with multi-layer device structure
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US Patent 9379322 Highly reliable nonvolatile memory and manufacturing method thereof
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US Patent 9722177 Resistive random access memory device with a solid electrolyte including a region made of a first metal oxide and doped by a second element distinct from the first metal
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US Patent 10037801 2T-1R architecture for resistive RAM
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US Patent 10186553 Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cells
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US Patent 10199098 2T-1R architecture for resistive RAM
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US Patent 10224480 Two-terminal reversibly switchable memory device
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US Patent 10340312 Memory element with a reactive metal layer
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US Patent 10388372 1T-1R architecture for resistive random access memory
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US Patent 10622062 2T-1R architecture for resistive ram
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US Patent 10777608 RRAM process integration scheme and cell structure with reduced masking operations
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US Patent 10783964 1T-1R architecture for resistive random access memory
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US Patent 10868246 Conductive bridge random access memory (CBRAM) devices with low thermal conductivity electrolyte sublayer
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US Patent 10943655 Techniques for initializing resistive memory devices by applying different polarity voltages across resistance change material
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US Patent 10998044 RRAM write using a ramp control circuit
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US Patent 11018295 Non-volatile memory structure with positioned doping
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US Patent 11342499 RRAM devices with reduced forming voltage
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US Patent 11468947 Techniques for initializing resistive memory devices by applying voltages with different polarities
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US Patent 11653580 Non-volatile memory structure with positioned doping
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Patent Primary Examiner
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Laura M Menz
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CPC Code
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G11C 13/0011
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G11C 13/0007
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