Patent attributes
The present invention relates to a highly reliable nonvolatile memory and a manufacturing method thereof. The nonvolatile memory comprises top electrodes, bottom electrodes and a resistive material layer disposed therebetween, wherein the top electrodes are positioned on top in the memory; the bottom electrodes are positioned on a substrate; metal oxide for forming the resistive material layer is doped with metal; and a metal oxygen storage layer is further disposed between the top electrodes and the resistive material layer. The manufacturing method adopts a method in which a doping method and a double-layer forming method are combined, so that the highly reliable and highly uniform resistive random access memory can be fabricated and accordingly the performance of the memory can be increased.
