US Patent 11948644 Two-part programming of memory cells

Memory having an array of memory cells might include control logic configured to cause the memory to program each memory cell of a plurality of memory cells whose respective data state is higher than or equal to a first particular data state of a plurality of data states while inhibiting programming of each memory cell of the plurality of memory cells whose respective data state is lower than the first particular data state, and program each memory cell of the plurality of memory cells whose respective data state is lower than or equal to a second particular data state of the plurality of data states after programming each memory cell of the plurality of memory cells whose respective data state is higher than or equal to the first particular data state.